Characterization, reliability, and yield BTI in sion and k FETs

被引：0
|
作者：
机构：
来源：
Tech. Dig. Int. Electron Meet. IEDM | 2008年
关键词：
D O I：
10.1109/IEDM.2008.4796624
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] BTI reliability of dual metal gate CMOSFETs with Hf-based high-k gate dielectrics
    Liao, J. C.
    Fang, Y. K.
    Hou, Y. T.
    Hung, C. L.
    Hsu, P. F.
    Lin, K. C.
    Huang, K. T.
    Lee, T. L.
    Liang, M. S.
    2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2007, : 36 - +
  • [22] Characterization and Modeling of BTI in SiC MOSFETs
    Cornigli, D.
    Tallarico, A. N.
    Reggiani, S.
    Fiegna, C.
    Sangiorgi, E.
    Sanchez, L.
    Valdivieso, C.
    Consentino, G.
    Crupi, F.
    49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019), 2019, : 82 - 85
  • [23] Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
    Samnakay, Rameez
    Balandin, Alexander A.
    Srinivasan, Purushothaman
    SOLID-STATE ELECTRONICS, 2017, 135 : 37 - 42
  • [24] Impact of OFF-State, HCI and BTI degradation in FDSOI ω-gate NW-FETs
    Valdivieso, C.
    Crespo-Yepes, A.
    Miranda, R.
    Bernal, D.
    Martin-Martinez, J.
    Rodriguez, R.
    Nafria, M.
    SOLID-STATE ELECTRONICS, 2023, 203
  • [25] Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
    Valdivieso, C.
    Crespo-Yepes, A.
    Miranda, R.
    Bernal, D.
    Martin-Martinez, J.
    Rodriguez, R.
    Nafria, M.
    SOLID-STATE ELECTRONICS, 2022, 194
  • [26] Trench Oxide Interface States & BTI Reliability in IGBT Device
    Sim, Zhi Lin
    Khor, Chun Wei
    Gao, Yuan
    Goh, David E. H.
    Ngwan, Voon Cheng
    2024 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, IPFA 2024, 2024,
  • [27] On the cumulative distribution function of the defect centric model for BTI reliability
    Nouguier, D.
    Pananakakis, G.
    Federspiel, X.
    Rafik, M.
    Roy, D.
    Ghibaudo, G.
    MICROELECTRONICS RELIABILITY, 2019, 92 : 168 - 171
  • [28] Process dependence of BTI reliability in advanced HK MG stacks
    Garros, X.
    Casse, M.
    Rafik, M.
    Fenouillet-Beranger, C.
    Reimbold, G.
    Martin, F.
    Wiemer, C.
    Boulanger, F.
    MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) : 982 - 988
  • [29] Junction temperature measurements and reliability of GaN FETs
    Kuball, Martin
    Pomeroy, James W.
    Montes Bajo, Miguel
    Silvestri, Marco
    Uren, Michael J.
    Killat, Nicole
    GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
  • [30] Challenges in the characterization and modeling of BTI induced variability in Metal Gate/High-k CMOS technologies
    Kerber, A.
    Nigam, T.
    2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013,
12345