Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability

被引：8
|
作者：
Samnakay, Rameez [1 ,2 ]
Balandin, Alexander A. [2 ,3 ]
Srinivasan, Purushothaman [1 ]
机构：
[1] Globalfoundries Inc, Malta, NY 12020 USA
[2] Univ Calif Riverside, Dept Elect & Comp Engn, Bourns Coll Engn, NDL, Riverside, CA 92521 USA
[3] Univ Calif Riverside, Dept Elect & Comp Engn, Bourns Coll Engn, Phonon Optimized Engn Mat POEM Ctr, Riverside, CA 92521 USA
来源：
SOLID-STATE ELECTRONICS | 2017年 / 135卷
基金：
美国国家科学基金会;
关键词：
Low-frequency noise; High-K gate dielectrics; Poly-Si/SiON dielectrics; Bias temperature instability; Interface traps; LOW-FREQUENCY NOISE; FIELD-EFFECT TRANSISTORS; 1/F NOISE; P-MOSFETS; GATE DIELECTRICS; INTERFACE; STRESS; CMOS; GENERATION; DEPENDENCE;
D O I：
10.1016/j.sse.2017.06.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high-k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk trap density, N-t, in both of these technologies. The low-frequency noise spectra were predominantly of 1/f(gamma) type with gamma < 1 for NMOS and similar to 1 for PMOS. For SiON based technologies, the lower V-TH degradation due to PBTI was noticed while considerable VTH degradation was observed for NBTI in both SiON and MGHK technologies. Both MGHK and SiON pFETs show a clear increase in the effective volume trap density, N-t, after NBTI. The increase in N-t in MGHK n-MOSFETs during PBTI is markedly higher than that in MGHK p-MOSFETs during NBTI. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：37 / 42
页数：6
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