A novel bias temperature instability characterization methodology for high-K MOSFETs

A characterization methodology based on a single pulse measurement for evaluating the bias temperature instability (BTI) of high-k devices has been developed. It is shown that the time dependence of the threshold voltage instability extracted from conventional DC and pulse I-d-V-g measurements can be affected by the fast charge relaxation process leading to erroneous predictions of lifetime. The proposed methodology separates the relaxation effects associated with the fast transient and slower constant voltage charging and allows extracting the dependence of intrinsic threshold voltage on stress time.