Deep-trap stress induced leakage current model for nominal and weak oxides

被引：0
|
作者：
Kamohara, Shiro [1 ,3 ]
Hu, Chenming [2 ]
Okumura, Tsugunori [3 ]
机构：
[1] Yield Management Department, Process Technology Development Division, Renesas Technology Corporation, Hitachinaka, Ibaraki 312-8504, Japan
[2] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, United States
[3] Department of Electrical and Electronic Engineering, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji, Tokyo 192-0397, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2008年 / 47卷 / 8 PART 1期
关键词：
Flash memory;
D O I：
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中图分类号：
学科分类号：
摘要：
Journal article (JA)
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收藏
页码：6208 / 6213
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