Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

被引：0
|
作者：
Chiu, Yu-Sheng [1 ]
Lin, Tai-Ming [1 ]
Nguyen, Hong-Quan [1 ]
Weng, Yu-Chen [2 ]
Nguyen, Chi-Lang [1 ]
Lin, Yueh-Chin [1 ]
Yu, Hung-Wei [1 ]
Yi Chang, Edward [1 ]
Lee, Ching-Ting [3 ]
机构：
[1] Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 300, Taiwan
[2] Institute of Lighting and Energy Photonics, College of Photonics, National Chiao Tung University, Tainan 71150, Taiwan
[3] Department of Electrical Engineering, National Cheng-Kung University, 1, University Road, Tainan 701, Taiwan
来源：
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 2014年 / 32卷 / 01期
关键词：
Surface morphology;
D O I：
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摘要：
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