Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

被引：0
|
作者：
Chiu, Yu-Sheng [1 ]
Lin, Tai-Ming [1 ]
Nguyen, Hong-Quan [1 ]
Weng, Yu-Chen [2 ]
Nguyen, Chi-Lang [1 ]
Lin, Yueh-Chin [1 ]
Yu, Hung-Wei [1 ]
Yi Chang, Edward [1 ]
Lee, Ching-Ting [3 ]
机构：
[1] Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 300, Taiwan
[2] Institute of Lighting and Energy Photonics, College of Photonics, National Chiao Tung University, Tainan 71150, Taiwan
[3] Department of Electrical Engineering, National Cheng-Kung University, 1, University Road, Tainan 701, Taiwan
来源：
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 2014年 / 32卷 / 01期
关键词：
Surface morphology;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure
    Dong, Zhihua
    Wang, Jinyan
    Wen, C. P.
    Liu, Shenghou
    Gong, Rumin
    Yu, Min
    Hao, Yilong
    Xu, Fujun
    Shen, Bo
    Wang, Yangyuan
    MICROELECTRONICS RELIABILITY, 2012, 52 (02) : 434 - 438
  • [22] Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contact to undoped AlGaN/GaN heterostructures
    Desmaris, V
    Eriksson, J
    Rorsman, N
    Zirath, H
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (04) : G72 - G74
  • [23] Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN
    Vertiatchikh, Alexei
    Kaminsky, Ed
    Teetsov, Julie
    Robinson, Kevin
    SOLID-STATE ELECTRONICS, 2006, 50 (7-8) : 1425 - 1429
  • [24] Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures
    Jacobs, B
    Kramer, MCJCM
    Geluk, EJ
    Karouta, F
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 15 - 18
  • [25] Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability
    Kwak, JS
    Mohney, SE
    Lin, JY
    Kern, RS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (07) : 756 - 760
  • [26] Ohmic Contact Characteristic of Ti/Al/Ni/Au on AlGaN
    Li, Ling
    Zhang, Libing
    Sun, Yalun
    Wang, Yifang
    Gan, ZhiYing
    ICEPT2019: THE 2019 20TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, 2019,
  • [27] Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN
    Qin, ZX
    Chen, ZZ
    Tong, YZ
    Ding, XM
    Hu, XD
    Yu, TJ
    Zhang, GY
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (05): : 729 - 731
  • [28] Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN
    Z.X. Qin
    Z.Z. Chen
    Y.Z. Tong
    X.M. Ding
    X.D. Hu
    T.J. Yu
    G.Y. Zhang
    Applied Physics A, 2004, 78 : 729 - 731
  • [29] AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
    Wang, H. T.
    Tan, L. S.
    Chor, E. F.
    THIN SOLID FILMS, 2007, 515 (10) : 4476 - 4479
  • [30] Microanalysis of the Ti/Al and Ti/Al/Mo/Au ohmic contacts metallization to AlGaN/GaN heterostructures
    Macherzynski, Wojciech
    Stafiniak, Andrzej
    Paszkiewicz, Bogdan
    Gryglewicz, Jacek
    Paszkiewicz, Regina
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (05): : 1145 - 1149
12345