Planar split dual gate MOSFET: Fabrication, design, and layout

被引：0
|
作者：
Xiao, Deyuan [1 ]
Chen, Guoqing [1 ]
Li, Ruojia [1 ]
Lu, Pusheng [1 ]
Chen, Liangcheng [1 ]
Liu, Yong [1 ]
Shen, Qichang [1 ]
机构：
[1] Memory Technology Development Center, Semiconductor Manufacturing International (Shanghai) Corp, Shanghai 201203, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 06期
关键词：
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页码：923 / 930
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