Multi-gate MOSFET design

被引：0

作者：

Knoblinger, G. ^{[1
]}

Pacha, C. ^{[1
]}

Kuttner, F. ^{[1
]}

Marshall, A. ^{[1
]}

Russ, C. ^{[1
]}

Haibach, P. ^{[1
]}

Patruno, P. ^{[1
]}

Schulz, T. ^{[1
]}

von Arnim, K. ^{[1
]}

Engelstaedter, J. P. ^{[1
]}

Bertolissi, L. ^{[1
]}

Xiong, W. ^{[1
]}

Cleavelin, C. R. ^{[1
]}

Schruefer, K. ^{[1
]}

机构：

[1] Infineon Technol Austria, Siemensstr 2, A-9500 Villach, Austria

来源：

ESSDERC 2006: PROCEEDINGS OF THE 36TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, circuit design issues of emerging multigate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered.

引用

页码：65 / +

页数：2

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