Resistor, Capacitor and Inductor using Multi-Gate MOSFET (MMOS)

被引:0
|
作者
Das, Suvam
Das, Shoumik
Hanra, Sougata
Chatterjee, Shaswata
Bhattacharya, Shravasti
Chatterjee, Sulagna
机构
关键词
Multi-gate MOSFET (MMOS); cylindrical body; potential well; region of overlap; spike shaped barrier; channel;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this age of VLSI, for fabrication of ICs, different circuit components have to be to fabricated in a small space. A single device which can universally function as different circuit components would enhance the homogeneity and versatility of an electronic chip. A Multi-gate MOSFET or MMOS, if manufactured and controlled properly can be made to function as a variable resistor, capacitor or inductor. The gates of the MOSFET can be given different potentials to create potential wells which can overlap to create a channel for the flow of minority charges. Varying the potentials on the gates will change the region of overlap thus allowing the MMOS to be used as a variable resistor. The MMOS can be designed with a cylindrical body having a helical chain of gates to be used as an inductor. The MMOS can also be used a capacitor. Opposite potentials are applied to the two gates to produce different potential wells to act as capacitor walls.
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页数:3
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