Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si

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[1] [1,Tajima, Michio

[2] Iwata, Yasuaki

[3] 1,Okayama, Futoshi

[4] Toyota, Hiroyuki

[5] Onodera, Hisashi

[6] Sekiguchi, Takashi

来源：

Tajima, M. (tajima@isas.jaxa.jp) | 1600年 / American Institute of Physics Inc.卷 / 111期

关键词：

We have demonstrated the presence of a dislocation-related component and a component due to oxygen precipitates in a broad deep-level photoluminescence (PL) band in multicrystalline Si at room temperature. In PL intensity mapping; the lower-energy side of the deep-level PL band at about 0.79 eV appeared as a dark line along a small-angle grain boundary (SA-GB) surrounded by a bright band on either side; while the higher-energy side at about 0.87 eV as a bright line along the SA-GB. These intensity variations agree with the low-temperature PL intensity patterns for well-established dislocation-related lines of D1/D2 and those for oxygen precipitates; respectively. These patterns were observed around SA-GBs with a misorientation angle of 1-2°; and were assumed to be due to the distribution of secondary defects or impurities trapped by the strain field around dislocation clusters forming SA-GBs and that of preferential oxygen precipitation on the dislocations. A spectral component associated with the D3/D4 lines was also extractable from the deep-level PL at about 0.94 eV. The intensity increased on SA-GBs with the angle of ≤1°; where oxygen precipitation did not occur. This corresponds to the generally accepted idea that the D3/D4 lines are related to the intrinsic nature of dislocations. © 2012 American Institute of Physics;

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Conference article (CA)

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