Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films: Anomalous Hall effect

被引：0

作者：

Shim, Wooyoung ^{[1
]}

Lee, Kyoung-Il ^{[1
]}

Lee, Wooyoung ^{[1
]}

Jeon, Kyung Ah ^{[2
]}

Lee, Sang Yeol ^{[2
]}

Jung, Myung Hwa ^{[3
]}

机构：

[1] Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Korea, Republic of

[2] Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Korea, Republic of

[3] Quantum Materials Research Team, Korea Basic Science Institute, Deajeon, Seoul 305-333, Korea, Republic of

来源：

Journal of Applied Physics | 2007年 / 101卷 / 12期

关键词：

The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region; indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition. © 2007 American Institute of Physics;

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摘要：

Journal article (JA)

引用

共 47 条

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