Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films: Anomalous Hall effect

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作者：
Shim, Wooyoung [1 ]
Lee, Kyoung-Il [1 ]
Lee, Wooyoung [1 ]
Jeon, Kyung Ah [2 ]
Lee, Sang Yeol [2 ]
Jung, Myung Hwa [3 ]
机构：
[1] Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Korea, Republic of
[2] Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Korea, Republic of
[3] Quantum Materials Research Team, Korea Basic Science Institute, Deajeon, Seoul 305-333, Korea, Republic of
来源：
Journal of Applied Physics | 2007年 / 101卷 / 12期
关键词：
The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region; indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition. © 2007 American Institute of Physics;
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