Evidence for carrier-induced ferromagnetic ordering in Zn 1-xMnxO thin films: Anomalous Hall effect

被引：0
|
作者：
Shim, Wooyoung [1 ]
Lee, Kyoung-Il [1 ]
Lee, Wooyoung [1 ]
Jeon, Kyung Ah [2 ]
Lee, Sang Yeol [2 ]
Jung, Myung Hwa [3 ]
机构：
[1] Department of Materials Science and Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Korea, Republic of
[2] Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon, Seoul 120-749, Korea, Republic of
[3] Quantum Materials Research Team, Korea Basic Science Institute, Deajeon, Seoul 305-333, Korea, Republic of
来源：
Journal of Applied Physics | 2007年 / 101卷 / 12期
关键词：
The intrinsic origin of the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition was investigated. The ferromagnetic behaviors for a Zn1-x Mnx O (x=0.26) film grown at 700 °C under oxygen pressures of 10-1 Torr were observed at 4 and 300 K. The anomalous Hall effect (AHE) was found at temperatures of up to 210 K for the Zn0.74 Mn0.26 O thin film. The anomalous Hall coefficients (RA) were determined to be approximately proportional to the square of resistivity in the low field region; indicating the side-jump process for the AHE. Our results provide direct experimental evidence that a carrier-mediated mechanism is responsible for the ferromagnetic ordering in Zn1-x Mnx O thin films grown by pulsed-laser deposition. © 2007 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 47 条
  • [1] Evidence for carrier-induced ferromagnetic ordering in Zn1-xMnxO thin films:: Anomalous Hall effect
    Shim, Wooyoung
    Lee, Kyoung-Il
    Leea, Wooyoung
    Jeon, Kyung Ah
    Lee, Sang Yeol
    Jung, Myung Hwa
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [2] Anomalous Hall effect scaling in ferromagnetic thin films
    Grigoryan, Vahram L.
    Xiao, Jiang
    Wang, Xuhui
    Xia, Ke
    PHYSICAL REVIEW B, 2017, 96 (14)
  • [3] Ferromagnetic properties of Zn1-xMnxO epitaxial thin films
    Jung, SW
    An, SJ
    Yi, GC
    Jung, CU
    Lee, SI
    Cho, S
    APPLIED PHYSICS LETTERS, 2002, 80 (24) : 4561 - 4563
  • [4] Hole-Mediated Ferromagnetic Properties in Zn1-xMnxO Thin Films
    Lim, Sang-Wook
    Jeong, Min-Chang
    Ham, Moon-Ho
    Myoung, Jae-Min
    Japanese Journal of Applied Physics, Part 2: Letters, 2004, 43 (2 B):
  • [5] Hole-mediated ferromagnetic properties in Zn1-xMnxO thin films
    Lim, SW
    Jeong, MC
    Ham, MH
    Myoung, JM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2B): : L280 - L283
  • [6] Scaling of the thickness dependent anomalous Hall effect in amorphous ferromagnetic thin films
    Fan, Xiaolong
    Chen, Hang
    Rao, Jinwei
    Zhou, Hengan
    Zhang, Yichao
    Zhao, Xiaobing
    Xue, Desheng
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [7] Scaling of the thickness dependent anomalous Hall effect in amorphous ferromagnetic thin films
    20142817935322
    1600, American Institute of Physics Inc. (115):
  • [8] Phase-change control of anomalous Hall effect in ferromagnetic MnBi thin films
    Zhang, Siyue
    Miyazaki, Yu
    Yokouchi, Tomoyuki
    Shiomi, Yuki
    APPLIED PHYSICS LETTERS, 2022, 121 (26)
  • [9] Disorder and temperature dependence of the anomalous Hall effect in thin ferromagnetic films:: Microscopic model
    Muttalib, K. A.
    Woelfle, P.
    PHYSICAL REVIEW B, 2007, 76 (21):
  • [10] Carrier-induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers
    Ferrand, D
    Cibert, J
    Bourgognon, C
    Tatarenko, S
    Wasiela, A
    Fishman, G
    Bonanni, A
    Sitter, H
    Kolesnik, S
    Jaroszyski, J
    Barcz, A
    Dietl, T
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 387 - 390
12345