Amorphous oxide semiconductors for high-performance flexible thin-film transistors

被引：0

作者：

Nomura, Kenji ^{[1
]}

Takagi, Akihiro ^{[2
]}

Kamiya, Toshio ^{[1
,2
]}

Ohta, Hiromichi ^{[1
]}

Hirano, Masahiro ^{[1
]}

Hosono, Hideo ^{[1
,2
,3
]}

机构：

[1] ERATO-SORST, Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

[2] Materials and Structures Laboratory, Mailbox R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

[3] Frontier Collaborative Research Center, Mailbox S2-13, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 5 B期

关键词：

Recently; we have demonstrated the potential of amorphous oxide semiconductors (AOSs) for developing flexible thin-film transistors (TFTs). A material exploration of AOSs desired as the channel layer in TFTs is most important for developing high-performance devices. Here; we report our concept of material exploration for AOSs in high-performance flexible and transparent TFTs from the viewpoints of chemical bonding and electronic structure in oxide semiconductors. We find that amorphous In-Ga-Zn-O (a-IGZO) exhibits good carrier transport properties such as reasonably high Hall mobilities (>10cm 2&middotV-1&middotS-1) and a good controllability of carrier concentration from 15 to 10 20 cm-3. In addition; a-IGZO films have better chemical stabilities in ambient atmosphere and at temperatures up to 500°C. The flexible and transparent TFT fabricated using a-IGZO channel layer at room temperature operated with excellent performances; such as normally-off characteristics; on/off current ratios (∼106) and field-effect mobilities (∼10cm2&middotV-1&middotS-1); which are higher by an order of magnitude than those of amorphous Si:H and organics TFTs. © 2006 The Japan Society of Applied Physics;

D O I：

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学科分类号：

摘要：

Journal article (JA)

引用

页码：4303 / 4308

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