Amorphous oxide semiconductors for high-performance flexible thin-film transistors

被引：0
|
作者：
Nomura, Kenji [1 ]
Takagi, Akihiro [2 ]
Kamiya, Toshio [1 ,2 ]
Ohta, Hiromichi [1 ]
Hirano, Masahiro [1 ]
Hosono, Hideo [1 ,2 ,3 ]
机构：
[1] ERATO-SORST, Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
[2] Materials and Structures Laboratory, Mailbox R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
[3] Frontier Collaborative Research Center, Mailbox S2-13, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 5 B期
关键词：
Recently; we have demonstrated the potential of amorphous oxide semiconductors (AOSs) for developing flexible thin-film transistors (TFTs). A material exploration of AOSs desired as the channel layer in TFTs is most important for developing high-performance devices. Here; we report our concept of material exploration for AOSs in high-performance flexible and transparent TFTs from the viewpoints of chemical bonding and electronic structure in oxide semiconductors. We find that amorphous In-Ga-Zn-O (a-IGZO) exhibits good carrier transport properties such as reasonably high Hall mobilities (>10cm 2&middotV-1&middotS-1) and a good controllability of carrier concentration from 15 to 10 20 cm-3. In addition; a-IGZO films have better chemical stabilities in ambient atmosphere and at temperatures up to 500°C. The flexible and transparent TFT fabricated using a-IGZO channel layer at room temperature operated with excellent performances; such as normally-off characteristics; on/off current ratios (∼106) and field-effect mobilities (∼10cm2&middotV-1&middotS-1); which are higher by an order of magnitude than those of amorphous Si:H and organics TFTs. © 2006 The Japan Society of Applied Physics;
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页码：4303 / 4308
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