Performance improvement of GaN based Schottky barrier ultraviolet photodetector by adding a thin AlGaN window layer

被引：3
|
作者：
Department of Physics, China Agriculture University, Beijing 100083, China [1 ]
不详 [2 ]
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来源：
Chin. Phys. Lett. | 2007年 / 6卷 / 1745-1748期
关键词：
Aluminum gallium nitride;
D O I：
10.1088/0256-307X/24/6/086
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