The Impact of Changed Barrier Layer Parameters upon Tunnelling in GaN/AlGaN/GaN Schottky Structures

被引：0
|
作者：
Racko, J. [1 ]
Mikolasek, M. [1 ]
Granzner, R. [2 ]
Al Mustafa, N. [2 ]
Schwierz, F. [2 ]
Breza, J. [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Ilkovicova 3, Bratislava 81219, Slovakia
[2] Tech Univ Ilmenau, D-98684 Ilmenau, Germany
来源：
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2012年
关键词：
MODEL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have designed and applied a new trap-assisted-tunnelling model to simulate GaN/AlGaN/GaN Schottky structures. The influence was investigated of a varied cap thickness on the overall current flow. It is shown that large currents experimentally observed in such a reverse biased Schottky structure have a tunnelling nature and can be described by our new model.
引用
收藏
页码：207 / 210
页数：4
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