AlGaN/GaN Schottky Barrier UV Photodetectors With a GaN Sandwich Layer

被引：11

作者：

Lee, K. H. ^{[1
,2
]}

Chang, P. C. ^{[3
]}

Chang, S. J. ^{[1
,2
]}

Wang, Y. C. ^{[1
,2
]}

Yu, C. L. ^{[1
,2
]}

Wu, S. L. ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 701, Taiwan

[3] Kun Shan Univ, Dept Elect Engn, Tainan 701, Taiwan

[4] Chen Shiu Univ, Dept Elect Engn, Kaohsiung Hsien 833, Taiwan

来源：

IEEE SENSORS JOURNAL | 2009年 / 9卷 / 07期

关键词：

Sandwich layer; secondary GaN buffer; ultraviolet (UV); CHEMICAL-VAPOR-DEPOSITION; X-RAY-DIFFRACTION; THREADING DISLOCATIONS; ULTRAVIOLET DETECTORS; EPITAXIAL GAN; BUFFER LAYER; GROWN GAN; SAPPHIRE; NOISE; DETECTIVITY;

D O I：

10.1109/JSEN.2009.2022565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the characteristics of an AlGaN/GaN Schottky barrier ultraviolet (UV) photodetectors (PDs) with and without a GaN sandwich layer. The effect of inserting this secondary GaN buffer layer on the growth mode and crystal properties of the whole epitaxial GaN layer was reported. It was found that we could reduce defect density and thus improve crystal quality of the AlGaN/GaN Schottky barrier UV PDs by using a GaN sandwich layer. It was also found that we could use the GaN sandwich structure to suppress photoconductive gain (PCG), enhance UV-to-visible rejection ratio (UTV-RR), reduce noise level, and enhance the detectivity of the fabricated PDs.

引用

页码：814 / 819

页数：6

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