Ion cleaning of facets for improving the reliability of high power 980 nm semiconductor lasers

被引：0
|
作者：
Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China [1 ]
机构：
来源：
Chin. Phys. Lett. | 2006年 / 1卷 / 124-125期
关键词：
Air cleaners - Semiconductor lasers - Indium alloys - Gallium alloys - Removal - Semiconducting indium gallium arsenide - Semiconductor diodes - Cleaning - Semiconductor alloys;
D O I：
10.1088/0256-307X/23/1/036
中图分类号：
学科分类号：
摘要：
We report a simple and available way of improving the reliability of high power InGaAs 980 nm lasers by cleaning the facets using Ar ion before the protecting films have been coated. The Ar cleaning can remove the impurity and the oxide on the air-cleaved facets of laser diodes. It is proven that the way has marked effect on reducing the gradual degradation rate of laser diodes and improving the catastrophic-optical-damage threshold. ©2005 Chinese Physical Society and IOP Publishing Ltd.
引用
收藏
相关论文
共 50 条
  • [1] Ion cleaning of facets for improving the reliability of high power 980 nm semiconductor lasers
    Shu, XW
    Xu, C
    Tian, ZX
    Shen, GD
    CHINESE PHYSICS LETTERS, 2006, 23 (01) : 124 - 125
  • [2] 980 nm high power semiconductor lasers
    Gao, X
    Qu, Y
    Li, H
    Bo, BX
    APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 516 - 518
  • [3] Reliability of High Power/Brightness Diode Lasers Emitting from 790 nm to 980 nm
    Bao, L.
    Bai, J.
    Price, K.
    DeVito, M.
    Grimshaw, M.
    Dong, W.
    Guan, X.
    Zhang, S.
    Zhou, H.
    Bruce, K.
    Dawson, D.
    Kanskar, M.
    Martinsen, R.
    Haden, J.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XI, 2013, 8605
  • [4] High power 980 nm pump lasers
    Smith, GM
    Loeber, DAS
    Solimine, SD
    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 512 - 513
  • [5] High performance 980 nm single mode semiconductor lasers
    Li, Hui
    Qu, Yi
    Gao, Xin
    Bo, Bao-Xue
    Liu, Guo-Jun
    Binggong Xuebao/Acta Armamentarii, 2010, 31 (08): : 1110 - 1113
  • [6] High power 980nm and 1480nm lasers
    Kasukawa, A
    OPTICAL AMPLIFIERS AND THEIR APPLICATIONS, PROCEEDINGS, 2001, 44 : 49 - 51
  • [7] Grating stabilization design for high-power 980-nm semiconductor pump lasers
    Davis, MK
    Ghislotti, G
    Balsamo, S
    Loeber, DAS
    Smith, GM
    Hu, MH
    Nguyen, HK
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (05) : 1197 - 1208
  • [8] High power 980nm laser arrays with nonabsorbing facets
    Qu, Y
    Bo, BW
    Zhang, BS
    Gao, X
    Zhang, XD
    Shi, JW
    ADVANCED PHOTONIC SENSORS: TECHNOLOGY AND APPLICATIONS, 2000, 4220 : 214 - 216
  • [9] Design and Fabrication of 980nm Three-Active Regions High Power Semiconductor Lasers
    Wang, Zhiqun
    Zhang, Lei
    Cui, Bifeng
    Shen, Guangdi
    2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2, 2009, : 137 - 138
  • [10] High power and high reliability InGaAs broad area lasers emitting between 910 and 980nm
    Zou, Y
    Zucker, E
    Uppal, K
    Coblentz, D
    Liang, P
    Peters, M
    Craig, R
    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 510 - 511
12345