Ion cleaning of facets for improving the reliability of high power 980 nm semiconductor lasers

被引：0
|
作者：
Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China [1 ]
机构：
来源：
Chin. Phys. Lett. | 2006年 / 1卷 / 124-125期
关键词：
Air cleaners - Semiconductor lasers - Indium alloys - Gallium alloys - Removal - Semiconducting indium gallium arsenide - Semiconductor diodes - Cleaning - Semiconductor alloys;
D O I：
10.1088/0256-307X/23/1/036
中图分类号：
学科分类号：
摘要：
We report a simple and available way of improving the reliability of high power InGaAs 980 nm lasers by cleaning the facets using Ar ion before the protecting films have been coated. The Ar cleaning can remove the impurity and the oxide on the air-cleaved facets of laser diodes. It is proven that the way has marked effect on reducing the gradual degradation rate of laser diodes and improving the catastrophic-optical-damage threshold. ©2005 Chinese Physical Society and IOP Publishing Ltd.
引用
收藏
相关论文
共 50 条
  • [31] High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets
    Yi, Q
    Bo, BX
    Zhang, BS
    Gao, X
    Zhang, XD
    Shi, JW
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 202 - 205
  • [32] Grating stabilization design for high-power 980-nm semiconductor pump lasers (vol 11, pg 1197, 2005)
    Davis, MK
    Ghislotti, G
    Balsamo, S
    Loeber, DAS
    Smith, GM
    Hu, MH
    Nguyen, HK
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (06) : 1299 - 1299
  • [33] Design and Fabrication of 980 nm Distributed Bragg Reflection Semiconductor Laser with High Power
    Qiao Chuang
    Su Ruigong
    Li Xiang
    Fang Dan
    Fang Xuan
    Tang Jilong
    Zhang Baoshun
    Wei Zhipeng
    CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2019, 46 (07):
  • [34] Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers
    Sweeney, SJ
    Lyons, LJ
    Adams, AR
    Lock, DA
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) : 1325 - 1332
  • [35] Reliability Study of Fiber Coupling Efficiency of 980 nm Semiconductor Laser
    Liu, Gang
    Pang, Shuhao
    Zhang, Xin
    Tang, Mingzhi
    Liang, Lei
    Li, Rui
    Huang, Rui
    PHOTONICS, 2024, 11 (12)
  • [36] High Power 1100-1200 nm Semiconductor Disk Lasers
    Leinonen, T.
    Kantola, E.
    Ranta, S.
    Tavast, M.
    Korpijarvi, V-M
    Guina, M.
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013,
  • [37] 980nm high power, high slope efficiency distributed feedback lasers with nonabsorbing mirrors
    Lammert, RM
    Unger, JE
    Oh, SW
    Qi, H
    Chen, JS
    Chaim, NB
    ELECTRONICS LETTERS, 1998, 34 (17) : 1663 - 1664
  • [38] 1550 nm DFB semiconductor lasers with high power and low noise
    Zhao, Yi-Guang
    Nikolov, Anguel
    Dutt, Raj
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XIX, 2011, 7933
  • [39] Imaging of curved facet unstable resonator semiconductor lasers operating at 980 nm
    O'Brien, P
    Moorhouse, C
    Braddell, J
    McInerney, J
    ELECTRONICS LETTERS, 1998, 34 (06) : 561 - 562
  • [40] Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm
    Avrutskii, IA
    Dianov, EM
    Zvonkov, BN
    Zvonkov, NB
    Malkina, IG
    Maksimov, GA
    Uskova, EA
    QUANTUM ELECTRONICS, 1997, 27 (02) : 118 - 121
12345