Room-temperature bonding of GaN to Al using Ar-Beam surface activation

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Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8904, Japan [1 ]
不详 [2 ]
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IEEJ Trans. Sens. Micromach. | / 8卷 / 369-372期
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摘要：
Gallium nitride
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