Quantum mechanical effects on heat generation in nano-scale MOSFETs

被引：1
|
作者：
Institute of Microelectronics, Peking University, Beijing 100871, China [1 ]
机构：
来源：
Chin. Phys. | 2008年 / 5卷 / 1869-1873期
关键词：
Collision broadening - Nano scale - Nanoscale metals - QM effects - Quantum Boltzmann equations - Quantum mechanical effects - Quantum potentials - Real-space;
D O I：
10.1088/1674-1056/17/5/054
中图分类号：
学科分类号：
摘要：
The Monte Carlo simulation is performed to investigate the quantum mechanical (QM) effects on heat generation in nano-scale metal oxide semiconductor field effect transistors (MOSFETs) by solving the quantum Boltzmann equation. The influence of QM effects both in real space and K space on the heat generation is investigated. © 2008 Chin. Phys. Soc. and IOP Publishing Ltd.
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