Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localization

被引：0
|
作者：
Omura, Y
Yamamoto, M
机构：
[1] Kansai Univ, High Technol Res Ctr, Suita, Osaka 5648680, Japan
[2] Hokkaido Univ, Div Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
来源：
JOURNAL DE PHYSIQUE IV | 2002年 / 12卷 / PR3期
关键词：
D O I：
10.1051/jp420020043
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper describes the transport characteristics, measured at 1.1 K, of 50-nm-channel SOI MOSFETs with a 6-nm-thick silicon layer. To verify electron localization, Fermi wavelength, periodic length of primary interface morphology, and ideal cyclotron radius are estimated theoretically. It is shown that non-periodic roughness may contribute to Anderson localization while the local periodic structure of the interface morphology is associated with Coulomb blockade.
引用
收藏
页码：93 / 96
页数：4
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