Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localization

被引：0

作者：

Omura, Y

Yamamoto, M

机构：

[1] Kansai Univ, High Technol Res Ctr, Suita, Osaka 5648680, Japan

[2] Hokkaido Univ, Div Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan

来源：

JOURNAL DE PHYSIQUE IV | 2002年 / 12卷 / PR3期

关键词：

D O I：

10.1051/jp420020043

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper describes the transport characteristics, measured at 1.1 K, of 50-nm-channel SOI MOSFETs with a 6-nm-thick silicon layer. To verify electron localization, Fermi wavelength, periodic length of primary interface morphology, and ideal cyclotron radius are estimated theoretically. It is shown that non-periodic roughness may contribute to Anderson localization while the local periodic structure of the interface morphology is associated with Coulomb blockade.

引用

页码：93 / 96

页数：4

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