Temperature field optimization and polytype control in the growth of 6H-SiC single crystal

被引:0
|
作者
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China [1 ]
机构
来源
Rengong Jingti Xuebao | 2006年 / 1卷 / 41-44期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Catalytic plasma anodization of single-crystal 6H-SiC structures
    Bibilashvili, AP
    Gerasimov, AB
    Kazarov, RÉ
    Samadashvili, ZD
    TECHNICAL PHYSICS LETTERS, 1999, 25 (08) : 593 - 594
  • [32] Origin of the internal stress around the micropipe of 6H-SiC single crystal
    Kato, T
    Ohsato, H
    Okuda, T
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 449 - 452
  • [33] Catalytic plasma anodization of single-crystal 6H-SiC structures
    A. P. Bibilashvili
    A. B. Gerasimov
    R. É. Kazarov
    Z. D. Samadashvili
    Technical Physics Letters, 1999, 25 : 593 - 594
  • [34] Effect of Abrasives on the Lapping Performance of 6H-SiC Single Crystal Wafer
    Li Wei
    Yan Qiusheng
    Lu Jiabin
    Pan Jisheng
    MATERIAL DESIGN, PROCESSING AND APPLICATIONS, PARTS 1-4, 2013, 690-693 : 2179 - 2184
  • [35] Defects formation in sublimation grown 6H-SiC single crystal boules
    Madar, R
    Anikin, M
    Chourou, K
    Labeau, M
    Pons, M
    Blanquet, E
    Dedulle, JM
    Bernard, C
    Milita, S
    Baruchel, J
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1249 - 1261
  • [36] Section images of dislocations normal to the surface of a 6H-SiC single crystal
    A. O. Okunev
    L. N. Danil’chuk
    V. A. Tkal’
    Physics of the Solid State, 2006, 48 : 2084 - 2090
  • [37] Defects formation in sublimation grown 6H-Sic single crystal boules
    LMGP-UMR 5628 CNRS, ENSPG, BP 46-38402, St Martin d'Hères, France
    不详
    不详
    Diamond Relat. Mat., 10 (1249-1261):
  • [38] Etching characterization of a 6H-SiC single crystal grown by the sublimation method
    Koga, K
    Kano, T
    Yagi, K
    Yodoshi, K
    Niina, T
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 425 - 428
  • [39] Nitrogen ion implantation and thermal annealing in 6H-SiC single crystal
    Miyajima, Takeshi
    Tokura, Norihito
    Fukumoto, Atsuo
    Hayashi, Hidemitsu
    Hara, Kunihiko
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 1231 - 1234
  • [40] Model for micropipe formation in 6H-SiC single crystal by sublimation method
    Liu, JL
    Gao, JQ
    Cheng, JK
    Yang, JF
    Qiao, GJ
    MATERIALS LETTERS, 2005, 59 (18) : 2374 - 2377