Model for micropipe formation in 6H-SiC single crystal by sublimation method

被引：15
|
作者：
Liu, JL [1 ]
Gao, JQ [1 ]
Cheng, JK [1 ]
Yang, JF [1 ]
Qiao, GJ [1 ]
机构：
[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 18期
关键词：
micropipe; defects; stacking fault; inclusion; crystal growth;
D O I：
10.1016/j.matlet.2005.01.089
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The micropipe formation in 6H-SiC single crystal fabricated by sublimation method has been investigated via a stacking fault with a core of inclusion model. Sizes, shapes and the density of micropipes were investigated and the inclusions in the micropipes and the stacking faults (SFs) were analyzed. SFs and inclusions are the two necessary conditions for the formation of the micropipes. The shapes of micropipes are determined by the SFs tracks, and their sizes and density are mainly done by the sizes and number of the inclusions. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：2374 / 2377
页数：4
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