Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

被引：0
|
作者：
Lai, K.Y. [1 ]
Paskova, T. [2 ,3 ]
Wheeler, V.D. [2 ]
Grenko, J.A. [2 ]
Johnson, M.A.L. [2 ]
Barlage, D.W. [1 ]
Udwary, K. [3 ]
Preble, E.A. [3 ]
Evans, K.R. [3 ]
机构：
[1] Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, Raleigh, NC 27695, United States
[2] Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695, United States
[3] Kyma Technologies Inc., Raleigh, NC 27617, United States
来源：
Journal of Applied Physics | 2009年 / 106卷 / 11期
关键词：
Semiconductor quantum wells;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] Electronic and optical properties of a- and m-plane wurtzite InGaN-GaN quantum wells
    Park, Seoung-Hwan
    Ahn, Doyeol
    Chuang, Shun-Lien
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) : 1175 - 1182
  • [32] Structural and optical properties of nonpolar InGaN/GaN multiple quantum wells grown on planar and lateral epitaxially overgrown m-plane GaN films
    Chakraborty, Arpan
    Haskell, Benjamin A.
    Wu, Feng
    Keller, Stacia
    DenBaars, Steven P.
    Nakamura, Shuji
    Speck, James S.
    Mishra, Umesh K.
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (02): : 542 - 546
  • [33] Intersubband Transitions in GaN/Al0.5Ga0.5N Quantum Wells on a-Plane and m-Plane GaN Substrates
    Xu, Jiaming
    Monavarian, Morteza
    Nookala, Nishant
    Fireman, Micha N.
    Qwah, K. S.
    Speck, James S.
    Belkin, Mikhail A.
    2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2020,
  • [34] M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
    Koester, Robert
    Hwang, Jun-Seok
    Salomon, Damien
    Chen, Xiaojun
    Bougerol, Catherine
    Barnes, Jean-Paul
    Dang, Daniel Le Si
    Rigutti, Lorenzo
    Bugallo, Andres de Luna
    Jacopin, Gwenole
    Tchernycheva, Maria
    Durand, Christophe
    Eymery, Joel
    NANO LETTERS, 2011, 11 (11) : 4839 - 4845
  • [35] Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
    Feng Zhang
    Masao Ikeda
    Shu-Ming Zhang
    Jian-Ping Liu
    Ai-Qin Tian
    Peng-Yan Wen
    Yang Cheng
    Hui Yang
    Nanoscale Research Letters, 2016, 11
  • [36] Optical and structural properties of m-plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates
    Kudrawiec, R.
    Rudzinski, M.
    Kucharski, R.
    Zajac, M.
    Doradzinski, R.
    Sierzputowski, L. P.
    Garczynski, J.
    Serafinczuk, J.
    Strupinski, W.
    Misiewicz, J.
    Dwilinski, R.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2359 - 2364
  • [37] Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In) GaN Multiple Quantum Wells Grown by MOCVD
    Zhang, Feng
    Ikeda, Masao
    Zhang, Shu-Ming
    Liu, Jian-Ping
    Tian, Ai-Qin
    Wen, Peng-Yan
    Cheng, Yang
    Yang, Hui
    NANOSCALE RESEARCH LETTERS, 2016, 11
  • [38] Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template
    Yu, Hongbo
    Jung, Taeil
    Ku, P. C.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1618 - 1620
  • [39] On Hydrogenated Bilayer GaN: New Stable Structures along the c-Plane, m-Plane, or a-Plane
    Lu, Anh Khoa Augustin
    Yayama, Tomoe
    Morishita, Tetsuya
    Nakanishi, Takeshi
    JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (31): : 16888 - 16894
  • [40] Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
    Farrell, R. M.
    Haeger, D. A.
    Fujito, K.
    DenBaars, S. P.
    Nakamura, S.
    Speck, J. S.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (06)
12345