Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

被引：0
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作者：
Lai, K.Y. [1 ]
Paskova, T. [2 ,3 ]
Wheeler, V.D. [2 ]
Grenko, J.A. [2 ]
Johnson, M.A.L. [2 ]
Barlage, D.W. [1 ]
Udwary, K. [3 ]
Preble, E.A. [3 ]
Evans, K.R. [3 ]
机构：
[1] Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, Raleigh, NC 27695, United States
[2] Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, NC 27695, United States
[3] Kyma Technologies Inc., Raleigh, NC 27617, United States
来源：
Journal of Applied Physics | 2009年 / 106卷 / 11期
关键词：
Semiconductor quantum wells;
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摘要：
Journal article (JA)
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