Europium doping of zincblende GaN by ion implantation

被引：0

作者：

Lorenz, K. ^{[1
,2
]}

Roqan, I.S. ^{[3
]}

Franco, N. ^{[1
,2
]}

O'Donnell, K.P. ^{[3
]}

Darakchieva, V. ^{[1
,2
]}

Alves, E. ^{[1
,2
]}

Trager-Cowan, C. ^{[3
]}

Martin, R.W. ^{[3
]}

As, D.J. ^{[4
]}

Panfilova, M. ^{[4
]}

机构：

[1] Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavem, Portugal

[2] CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal

[3] Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom

[4] Department of Physics, University of Paderborn, 33098 Paderborn, Germany

来源：

Journal of Applied Physics | 2009年 / 105卷 / 11期

关键词：

Zinc sulfide - Rutherford backscattering spectroscopy - Gallium nitride - Ion implantation - III-V semiconductors - Molecular beam epitaxy - X ray diffraction;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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