Surface recombination in organic solar cells: Intrinsic vs. doped active layer

被引:0
|
作者
Akhtanova, Gulnur [1 ]
Parkhomenko, Hryhorii P. [1 ]
Vollbrecht, Joachim [2 ]
Mostovyi, Andrii I. [1 ,2 ]
Schopp, Nora [3 ]
Brus, Viktor [1 ]
机构
[1] Nazarbayev Univ, Sch Sci & Humanities, Dept Phys, Astana 010000, Kazakhstan
[2] Inst Solar Energy Res Hamelin, Dept Photovolta, D-31860 Emmerthal, Germany
[3] First Solar Inc, 28101 Cedar Pk Blvd, Perrysburg, OH 43551 USA
关键词
Non-fullerene acceptors; Non-geminate recombination; Surface recombination; Organic bulk heterojunction solar cells; MOTT-SCHOTTKY ANALYSIS; BULK;
D O I
10.1016/j.orgel.2024.107183
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study extends the analytical model of surface recombination in organic solar cells with an intrinsic active bulk-heterojunction layer. The key finding of the developed multi-mechanism recombination model accounting for the intrinsic active layer is that the slope of V OC vs. ln(Light Intensity) cannot be lower than 1.0 kT/q even at the extremely high concentrations of surface traps. We revealed the difference in recombination-related parameters determined in the scope of the multi-mechanism recombination model for the doped or intrinsic active layer and highlighted the importance of identifying the doping level of the active layer material. This is demonstrated by a synergy of comprehensive simulation and experimental analysis of organic solar cells with donor: acceptor blends: (PM6:Y6, PTB7-Th:COTIC-4F, PTB7-Th:O-IDTBR and PTB7-Th:ITIC-4F).
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页数:10
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