Nanopattern profile control technology using reactive ion etching for 100 GB optical disc mastering

被引：0
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作者：
Fujimura, Megumi [1 ]
Hosoda, Yasuo [1 ]
Katsumura, Masahiro [1 ]
Kobayashi, Masaki [1 ]
Kitahara, Hiroaki [1 ]
Hashimoto, Kazunobu [1 ]
Kasono, Osamu [1 ]
Iida, Tetsuya [1 ]
Kuriyama, Kazumi [1 ]
Yokogawa, Fumihiko [1 ]
机构：
[1] Corporate Research and Development Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima, Saitama 350-2288, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 45卷 / 2 B期
关键词：
We had developed an electron beam recorder (EBR) and studied a process technology for high-density optical disc mastering. In this study; we aimed at controlling a nanopattern profile by adopting inductively coupled plasma reactive ion etching (ICP-RIE) under simple conditions. To control a pattern inclination angle; we introduced an etching power ratio of antenna to bias and investigated the relationship. From the results of our investigation; we confirmed that inclination angle depended on etching power ratio linearly. Furthermore; in the case of a 100GB read-only memory (ROM) equivalent pattern; we formed two kinds of inclined pattern by adopting ICP-RIE. We evaluated line edge roughness (LER) to determine the difference in pit profile accurately. As the result; we confirmed that LER was improved at a steep inclination angle. In addition; we applied ICP-RIE to a 300GB ROM pattern. © 2006 The Japan Society of Applied Physics;
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页码：1414 / 1418
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