Optical emission spectrometry of plasma in low-damage sub-100 nm tungsten gate reactive ion etching process for compound semiconductor transistors

被引：0
|
作者：
Li, Xu [1 ]
Zhou, Haiping [1 ]
Wilkinson, Chris D. W. [1 ]
Thayne, Iain G. [1 ]
机构：
[1] Nanoelectronics Research Centre, Department of Electrical and Electronics Engineering, Glasgow University, Glasgow, G12 8LT, United Kingdom
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 10 B期
关键词：
Gates; (transistor);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
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页码：8364 / 8369
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