Investigation of epitaxial LaNiO3-x thin films by high-energy XPS

被引：0

作者：

Mickevičius, S. ^{[1
]}

Grebinskij, S. ^{[1
]}

Bondarenka, V. ^{[1
]}

Vengalis, B. ^{[1
]}

Šliužiene, K. ^{[1
]}

Orlowski, B.A. ^{[2
]}

Osinniy, V. ^{[2
]}

Drube, W. ^{[3
]}

机构：

[1] Semiconductor Physics Institute, A. Gostauto 11, 01108 Vilnius, Lithuania

[2] Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland

[3] Hamburger Synchrotronstrahlungslabor HASYLAB am Deutschen Elektronen-Synchrotron DESY, Notkestr. 85, D-22603 Hamburg, Germany

来源：

Journal of Alloys and Compounds | 2006年 / 423卷 / 1-2 SPEC. ISS.期

关键词：

Epitaxial thin films of LaNiO3-x were deposited by using a reactive d.c. magnetron sputtering technique. High-energy X-ray photoelectron spectroscopy was used to analyze the composition and valence states of La and Ni in the films after long time aging in atmosphere. The obtained results show the existence lanthanum and nickel in oxide and hydroxide chemical states. The oxygen exists in four chemical states: lattice oxides; hydroxyl groups and in adsorbed water. Comparison of the spectra recorded at normal emission and grazing emission angle revealed that the hydroxyl group's concentration is mostly present at the surface of the film. © 2005 Elsevier B.V. All rights reserved;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：107 / 111

共 50 条

[21] The role of oxygen vacancies on the weak localization in LaNiO3-δ epitaxial thin films
Walke, P.
Gupta, S.
Li, Q. R.
Major, M.
Donner, W.
Mercey, B.
Luders, U.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2018, 123 : 1 - 5
[22] Insulating state of ultrathin epitaxial LaNiO3 thin films detected by hard x-ray photoemission
Gray, A. X.
Janotti, A.
Son, J.
LeBeau, J. M.
Ueda, S.
Yamashita, Y.
Kobayashi, K.
Kaiser, A. M.
Sutarto, R.
Wadati, H.
Sawatzky, G. A.
Van de Walle, C. G.
Stemmer, S.
Fadley, C. S.
PHYSICAL REVIEW B, 2011, 84 (07)
[23] 溅射时氧分压对LaNiO3-x薄膜性能的影响
赵强
褚君浩
功能材料与器件学报, 2003, (03) : 262 - 266
[24] High-energy ion tracks in thin films
Follstaedt, DM
Norman, AK
Rossi, P
Doyle, BL
McDaniel, FD
Bringa, EM
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2): : 79 - 81
[25] High-quality epitaxial LaNiO3 thin films on SrTiO3(100) and LaAlO3(100)
Sánchez, F
Ferrater, C
Guerrero, C
García-Cuenca, MV
Varela, M
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (01): : 59 - 64
[26] High-quality epitaxial LaNiO3 thin films on SrTiO3(100) and LaAlO3(100)
F. Sánchez
C. Ferrater
C. Guerrero
M.V. García-Cuenca
M. Varela
Applied Physics A, 2000, 71 (1) : 59 - 64
[27] Sol-Gel Synthesis and Characterisation of Nanostructured LaNiO3-x for Thermoelectric Applications
Hsiao, Chun-Lung
Chang, Wei-Che
Qi, Xiaoding
SCIENCE OF ADVANCED MATERIALS, 2014, 6 (07) : 1406 - 1411
[28] Metal-insulator transition in oxygen-deficient LaNiO3-x perovskites
Sanchez, RD
Causa, MT
Caneiro, A
Butera, A
ValletRegi, M
Sayagues, MJ
GonzalezCalbet, J
GarciaSanz, F
Rivas, J
PHYSICAL REVIEW B, 1996, 54 (23): : 16574 - 16578
[29] Metal-insulator transition in oxygen-deficient LaNiO3-x perovskites
Phys Rev B, 23 (16574):
[30] Pulsed laser deposition of epitaxial LaNiO3 thin films on buffered Si(100)
Sánchez, F
Ferrater, C
Alcobé, X
Bassas, J
García-Cuenca, MV
Varela, M
THIN SOLID FILMS, 2001, 384 (02) : 200 - 205

← 1 2 3 4 5 →