Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule

被引：0
|
作者：
Baira, M. [1 ]
Sfaxi, L. [1 ]
Bouzaiene, L. [1 ]
Maaref, H. [1 ]
Chauvin, N. [2 ,3 ]
Bru-Chevallier, C. [2 ]
机构：
[1] Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculté des Sciences de Monastir, Avenue de l'environnement, 5019 Monastir, Tunisia
[2] Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, France
[3] Eindhoven University of Technology-Photonics and Semiconductor Nanophysics, P.O. Box 513, Nlaag d 1.09-5600 MB Eindhoven, Netherlands
来源：
Journal of Applied Physics | 2008年 / 104卷 / 06期
关键词：
Indium arsenide;
D O I：
暂无
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学科分类号：
摘要：
Journal article (JA)
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