Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

被引：0
|
作者：
Tanoto, H. [1 ]
Yoon, S.F. [1 ,2 ]
Loke, W.K. [1 ]
Chen, K.P. [1 ,2 ]
Fitzgerald, E.A. [3 ,4 ]
Dohrman, C. [3 ]
Narayanan, B. [5 ]
机构：
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
[2] Singapore-MIT Alliance, Nanyang Drive, Singapore 637460, Singapore
[3] Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
[4] Singapore-MIT Alliance, Massachusetts Avenue, Cambridge, MA 02139, United States
[5] Institute of Microelectronics, Singapore Science Park II, Singapore 117685, Singapore
来源：
Journal of Applied Physics | 2008年 / 103卷 / 10期
关键词：
16;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY
    NOZAWA, K
    HORIKOSHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 626 - 631
  • [22] Misorientation in GaAs on Si grown by migration-enhanced epitaxy
    Nozawa, Kazuhiko
    Horikoshi, Yoshiji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B): : 626 - 631
  • [23] GROWTH OF GAAS-AL-GAAS BY MIGRATION-ENHANCED EPITAXY
    TADAYON, B
    TADAYON, S
    SPENCER, MG
    HARRIS, GL
    RATHBUN, L
    BRADSHAW, JT
    SCHAFF, WJ
    TASKER, PJ
    EASTMAN, LF
    APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2664 - 2665
  • [24] GROWTH OF GAAS/ERAS/GAAS STRUCTURES BY MIGRATION-ENHANCED EPITAXY
    YAMAGUCHI, H
    HORIKOSHI, Y
    APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2341 - 2343
  • [25] Impurity doping effect on the dislocation density in GaAs on Si(100) grown by migration-enhanced epitaxy
    Nozawa, Kazuhiko, 1600, (28):
  • [26] IMPURITY DOPING EFFECT ON THE DISLOCATION DENSITY IN GAAS ON SI (100) GROWN BY MIGRATION-ENHANCED EPITAXY
    NOZAWA, K
    HORIKOSHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1877 - L1879
  • [27] Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers
    Nakao, Ryo
    Arai, Masakazu
    Kakitsuka, Takaaki
    Matsuo, Shinji
    IEICE TRANSACTIONS ON ELECTRONICS, 2018, E101C (07): : 537 - 544
  • [28] MOLECULAR-BEAM EPITAXY GROWTH OF GE ON (100)SI
    BARIBEAU, JM
    HOUGHTON, DC
    JACKMAN, TE
    MCCAFFREY, JP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1158 - 1162
  • [29] GAAS HETEROEPITAXIAL GROWTH ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    YODO, T
    TAMURA, M
    LOPEZ, M
    KAJIKAWA, Y
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) : 7630 - 7632
  • [30] Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy
    Qu, XP
    Ru, GP
    Li, BZ
    Jie-Qin
    Jiang, ZM
    Chu, P
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 268 - 270
12345