Misorientation in GaAs on Si grown by migration-enhanced epitaxy

被引：0

作者：

Nozawa, Kazuhiko ^{[1
]}

Horikoshi, Yoshiji ^{[1
]}

机构：

[1] NTT Basic Research Lab, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期

关键词：

Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：626 / 631

共 50 条

[1] MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY
NOZAWA, K
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 626 - 631
[2] MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY - COMMENTS
RIESZ, F
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[3] Comments on 'misorientation in GaAs on Si grown by migration-enhanced epitaxy'
Riesz, Ferenc
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[4] INITIAL GROWTH-CONDITIONS OF GAAS ON (100)SI GROWN BY MIGRATION-ENHANCED EPITAXY
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[5] IMPURITY DOPING EFFECT ON THE DISLOCATION DENSITY IN GAAS ON SI (100) GROWN BY MIGRATION-ENHANCED EPITAXY
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[6] Impurity doping effect on the dislocation density in GaAs on Si(100) grown by migration-enhanced epitaxy
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[7] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
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[8] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
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[9] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
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[10] ER LUMINESCENCE-CENTERS IN GAAS GROWN BY MIGRATION-ENHANCED EPITAXY
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