Mask effects on resist variability in extreme ultraviolet lithography

被引:0
|
作者
Pret, Alessandro Vaglio [1 ]
Gronheid, Roel [1 ]
Engelen, Jan [2 ]
Yan, Pei-Yang [3 ]
Leeson, Michael J. [4 ]
Younkin, Todd R. [1 ,4 ]
Garidis, Konstantinos [5 ]
Biafore, John [6 ]
机构
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Katholieke Universiteit Leuven (K.U.Leuven), Department of Electrical Engineering, 3000 Leuven, Belgium
[3] Intel Corporation, 3065 Bowers Ave, Santa Clara, CA 95054, United States
[4] Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR 97124, United States
[5] Kungliga Tekniska Högskolan (KTH), Stockholm 10044, Sweden
[6] KLA-Tencor-Finle Division, Austin, TX 78759, United States
来源
Japanese Journal of Applied Physics | 2013年 / 52卷 / 6 PART 2期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Extreme ultraviolet lithography mask flatness and electrostatic chucking analysis
    Mikkelson, A
    Engelstad, R
    Lovell, E
    Blaedel, K
    Claudet, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 3091 - 3096
  • [42] Chemical mechanical polishing for extreme ultraviolet lithography mask substrates
    Amanapu, H. P.
    Lagudu, U. R. K.
    Teki, R.
    John-Kadaksham, A.
    Babu, S. V.
    CHEMICAL MECHANICAL POLISHING 12, 2013, 50 (39): : 73 - 79
  • [43] Aerial image mask inspection system for extreme ultraviolet lithography
    Kinoshita, Hiroo
    Hamamoto, Kazuhiro
    Sakaya, Nobuyuki
    Hosoya, Morio
    Watanabe, Takeo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (9B): : 6113 - 6117
  • [44] Mask substrate requirements and development for extreme ultraviolet lithography (EUVL)
    Tong, WM
    Taylor, JS
    Hector, SD
    Shell, MF
    19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 1999, 3873 : 421 - 428
  • [45] Defect repair for extreme ultraviolet lithography (EUVL) mask blanks
    Hau-Riege, SP
    Barty, A
    Mirkarimi, PB
    Stearns, DG
    Chapman, H
    Sweeney, D
    Clift, M
    Gullikson, E
    Yi, MS
    EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 : 331 - 338
  • [46] Practical approach for modeling extreme ultraviolet lithography mask defects
    Gullikson, EM
    Cerjan, C
    Stearns, DG
    Mirkarimi, PB
    Sweeney, DW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 81 - 86
  • [47] Estimation of resist sensitivity for extreme ultraviolet lithography using an electron beam
    Oyama, Tomoko Gowa
    Oshima, Akihiro
    Tagawa, Seiichi
    AIP ADVANCES, 2016, 6 (08)
  • [48] Enhancement of acid production in chemically amplified resist for extreme ultraviolet lithography
    Yamamoto, Hiroki
    Kozawa, Takahiro
    Tagawa, Seiichi
    Yukawa, Hiroto
    Sato, Mitsuru
    Onodera, Junichi
    APPLIED PHYSICS EXPRESS, 2008, 1 (04) : 0470011 - 0470013
  • [49] Multi-Trigger Resist for Electron Beam and Extreme Ultraviolet Lithography
    Popescu, C.
    McClelland, A.
    Kazazis, D.
    Dawson, G.
    Roth, J.
    Ekinci, Y.
    Theis, W.
    Robinson, A. P. G.
    34TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, 2018, 10775
  • [50] Enhancement of acid production in chemically amplified resist for extreme ultraviolet lithography
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
    不详
    Appl. Phys. Express, 4 (0470011-0470013):