Optimization of barrier structure for strain-compensated multiple-quantum-well AlGaInP laser diodes

被引:0
|
作者
Huang, Man-Fang [1 ]
Sun, Yu-Lung [1 ]
机构
[1] Institute of Photonics, National Changhua University of Education, I Jen-Der Rd., Changhua 50058, Taiwan
关键词
22;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
页码:7600 / 7604
相关论文
共 50 条
  • [1] Optimization of barrier structure for strain-compensated multiple-quantum-well AlGaInP laser diodes
    Huang, Man-Fang
    Sun, Yu-Lung
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7600 - 7604
  • [2] Effect oF InGaP barrier thickness on the performance of 1.3-μm InAsP/InP/InGaP strain-compensated multiple-quantum-well laser diodes
    Lee, CY
    Chen, LC
    Lin, CC
    Wu, MC
    Peng, DJ
    Ho, WJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (6B): : L697 - L699
  • [3] GAIN AND THRESHOLD CHARACTERISTICS OF STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL LASERS
    BRIGGS, ATR
    GREENE, PD
    JOWETT, JM
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) : 423 - 425
  • [4] Theoretical analysis for InGaAs (P) strain-compensated multiple-quantum-well lasers
    Peng, Yuheng
    An, Haiyan
    Chen, Weiyou
    Liu, Shiyong
    Chinese Journal of Lasers B (English Edition), 1998, B7 (03): : 289 - 293
  • [5] Very low threshold current operation of 1.3-μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes
    Wu, MY
    Yang, CD
    Lei, PH
    Wu, MC
    Ho, WJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (6B): : L643 - L645
  • [7] InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteristic
    SUN Ke
    WANG Jianhu
    ZHOU Dan
    PENG Jihu(State Key Lab. on Integrated Optoelectronics
    ChineseJournalofLasers, 1999, (05) : 3 - 5
  • [8] Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells
    Yu, YQ
    Zhang, XY
    Huang, BB
    Wang, DX
    Wei, JY
    Zhou, HL
    Pan, JQ
    Qi, Y
    Chen, WL
    Qin, XY
    Ren, ZX
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 97 (03): : 211 - 216
  • [9] 1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes
    Lei, PH
    Lin, CC
    Ho, WJ
    Wu, MC
    Laih, LW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (07) : 1129 - 1135
  • [10] Effect of InGaAsP intermediate layer in 1.3 μm AlGalnAs strain-compensated multiple quantum well laser diodes
    Lei, PH
    Yang, CD
    Wang, ZB
    Lin, CC
    Ho, WJ
    Wu, MC
    IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (06): : 541 - 544