InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteristic

被引：0
|
作者：
SUN Ke
WANG Jianhu
ZHOU Dan
PENG Jihu(State Key Lab. on Integrated Optoelectronics
机构：
来源：
Chinese Journal of Lasers | 1999年 / 05期
关键词：
strain-compensation; quantum well; laser diode; InGaAlAs/InP;
D O I：
暂无
中图分类号：
TN24 [激光技术、微波激射技术];
学科分类号：
0803 ; 080401 ; 080901 ;
摘要：
It is reported on realization of pulsed operation of InGaAs/InGaAlAs straincompensated multiple-quantum-well lasers at room temperatures. The working wavelength is 1. 56μm; the threshold current density for the stripe waveguide lasers is less than 1. 85kA/cm2； for the ridge waveguide lasers, the threshold current is 35 mA. The incorporation of compensated strain, which makes the multiple-quantum-well design applicable, leads to an obvious improvement on device temperature characteristic.
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页码：3 / 5
页数：4
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