Structural change and its electrooptical effects on terahertz radiation with post-growth annealing of low-temperature-grown GaAs

被引：0
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作者：
Youn, Doo-Hyeb [1 ]
Kim, Seong-Jin [2 ]
Kim, Gil-Ho [3 ]
Kang, Kwang-Yong [1 ]
机构：
[1] IT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea, Republic of
[2] Mitsubishi Cable Industries Ltd., 8 Nishino-cho, Amagasaki, Hyogo 660-0856, Japan
[3] School of Information and Communication Engineering and Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 10 A期
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页码：6514 / 6518
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