Influence of material growth and annealing conditions on recombination processes in low-temperature-grown GaAs

被引:0
|
作者
Loka, Hany S. [1 ]
Benjamin, Seldon D. [1 ]
Smith, Peter W.E. [1 ]
机构
[1] Dept. of Elec. and Comp. Engineering, Photonics Research Ontario, University of Toronto, 10 King's College Road, Toronto, Ont. M5S 3G4, Canada
来源
Optics Communications | 1999年 / 161卷 / 04期
关键词
Number:; -; Acronym:; NSERC; Sponsor: Natural Sciences and Engineering Research Council of Canada;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:232 / 235
相关论文
共 50 条
  • [1] Influence of material growth and annealing conditions on recombination processes in low-temperature-grown GaAs
    Loka, HS
    Benjamin, SD
    Smith, PWE
    OPTICS COMMUNICATIONS, 1999, 161 (4-6) : 232 - 235
  • [2] Influence of Be doping on material properties of low-temperature-grown GaAs
    Marcinkevicius, S
    Gaarder, A
    Siegert, J
    Roux, JF
    Coutaz, JL
    Wolos, A
    Kaminska, M
    Adomavicius, R
    Bertulis, K
    Krotkus, A
    DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 23 - 28
  • [3] ANNEALING STUDIES OF LOW-TEMPERATURE-GROWN GAAS-BE
    BLISS, DE
    WALUKIEWICZ, W
    AGER, JW
    HALLER, EE
    CHAN, KT
    TANIGAWA, S
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 1699 - 1707
  • [4] Annealing characteristics of native defects in low-temperature-grown MBE GaAs
    Darmo, J
    Dubecky, F
    Kordos, P
    Forster, A
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 67 - 70
  • [5] NOISE STUDIES OF HFETS ON LOW-TEMPERATURE-GROWN GAAS BUFFERS AND OF MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION
    VANRHEENEN, AD
    LIN, Y
    TEHRANI, S
    CHEN, CL
    SMITH, FW
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 82 - 85
  • [6] Be-doped low-temperature-grown GaAs material for optoelectronic switches
    Krotkus, A
    Bertulis, K
    Kaminska, M
    Korona, K
    Wolos, A
    Siegert, J
    Marcinkevicius, S
    Roux, JF
    Coutaz, JL
    IEE PROCEEDINGS-OPTOELECTRONICS, 2002, 149 (03): : 111 - 115
  • [7] ROLE OF EXCESS AS IN LOW-TEMPERATURE-GROWN GAAS
    WARREN, AC
    WOODALL, JM
    KIRCHNER, PD
    YIN, X
    POLLAK, F
    MELLOCH, MR
    OTSUKA, N
    MAHALINGAM, K
    PHYSICAL REVIEW B, 1992, 46 (08): : 4617 - 4620
  • [8] The behavior of As precipitates in low-temperature-grown GaAs
    Bourgoin, JC
    Khirouni, K
    Stellmacher, M
    APPLIED PHYSICS LETTERS, 1998, 72 (04) : 442 - 444
  • [9] Terahertz photomixing in low-temperature-grown GaAs
    Brown, ER
    Verghese, S
    McIntosh, KA
    ADVANCED TECHNOLOGY MMW, RADIO, AND TERAHERTZ TELESCOPES, 1998, 3357 : 132 - 142
  • [10] Generation and Detection of Terahertz Waves Using Low-Temperature-Grown GaAs with an Annealing Process
    Moon, Kiwon
    Choi, Jeongyong
    Shin, Jun-Hwan
    Han, Sang-Pil
    Ko, Hyunsung
    Kim, Namje
    Park, Jeong-Woo
    Yoon, Young-Jong
    Kang, Kwang-Yong
    Ryu, Han-Cheol
    Park, Kyung Hyun
    ETRI JOURNAL, 2014, 36 (01) : 159 - 162