Influence of pyrometric blind hole on the thermal field of SiC crystal growth system by PVT method

被引：0
|
作者：
Feng, Xian-Feng [1 ]
Chen, Zhi-Ming [1 ]
Pu, Hong-Bin [1 ]
机构：
[1] Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2010年 / 39卷 / 03期
关键词：
Silicon carbide - Crystal growth;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effects of pyrometric blind hole with different Structural parameters on the thermal field of SiC crystal growth surface have been studied. The results of simulation indicate that the radial temperature gradient and the axial temperature gradient are approximately proportional to the depth and radius of pyrometric blind hole while influence of pyrometric blind hole size on the radial temperature gradient and the axial temperature gradient is different; Changes in pyrometric blind hole size is more suitable for regulation of the radial temperature gradient; In addition, the growth rate of poly-SiC around SiC monocrystalline has increased with the increase in the radius and depth of pyrometric blind hole increase.
引用
收藏
页码：741 / 746
相关论文
共 50 条
  • [41] Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method
    Wang, W. J.
    Zuo, S. B.
    Bao, H. Q.
    Wang, J.
    Jiang, L. B.
    Chen, X. L.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2011, 46 (05) : 455 - 458
  • [42] Modelling and simulation of oxygen transport during AlN crystal growth by the PVT method
    Fu, Danyang
    Wang, Qikun
    Zhang, Gang
    Zhu, Ruzhong
    Liu, Huan
    Li, Zhe
    Wu, Liang
    JOURNAL OF CRYSTAL GROWTH, 2020, 551 (551)
  • [43] Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging
    Wellmann, PJ
    Bickermann, M
    Grau, M
    Hofmann, D
    Straubinger, TL
    Winnacker, A
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 259 - 264
  • [44] Evolution of 2-inch AlN single crystal grown on SiC seed via PVT method
    Zhang L.
    Wang Z.
    Cheng H.
    Fan C.
    Wang Y.
    Zhang Y.
    Jin L.
    Lai Z.
    Vacuum, 2024, 226
  • [45] Influence of Thermal Conductivity and Emissivity of Heat Shield Surface Material on the Thermal Field of Czochralski Silicon Crystal Growth
    Lv, Xuekang
    Hu, Rongrong
    Li, Jiacheng
    Ali, Salamat
    Li, Gengjin
    Qi, Jing
    SILICON, 2024, 16 (11) : 4821 - 4830
  • [46] Numerical Simulation and Experimental Research on AlN Crystal Initial Growth by Homoepitaxial PVT Method
    Huang, Jiali
    Wang, Qikun
    He, Guangdong
    Lei, Dan
    Fu, Danyang
    Gong, Jianchao
    Ren, Zhongming
    Deng, Kang
    Wu, Liang
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2019, 48 (10): : 3209 - 3214
  • [47] Numerical Simulation and Experimental Research on AlN Crystal Initial Growth by Homoepitaxial PVT Method
    Huang Jiali
    Wang Qikun
    He Guangdong
    Lei Dan
    Fu Danyang
    Gong Jianchao
    Ren Zhongming
    Deng Kang
    Wu Liang
    RARE METAL MATERIALS AND ENGINEERING, 2019, 48 (10) : 3209 - 3214
  • [48] Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
    Tymicki, E.
    Grasza, K.
    Racka-Dzietko, K.
    Raczkiewicz, M.
    Lukasiewicz, T.
    Gala, M.
    Kosciewicz, K.
    Diduszko, R.
    Bozek, R.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 15 - 18
  • [49] Dependance of hot-zone position on AlN single crystal growth by PVT method
    Yin, Gyong-Phil
    Kang, Seung-Min
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2016, 26 (02): : 84 - 88
  • [50] Digital X-ray imaging of SiC PVT process: Analysis of crystal growth and powder source degradation
    Wellmann, P.J.
    Bickermann, M.
    Hofmann, D.
    Kadinski, L.
    Selder, M.
    Straubinger, T.L.
    Winnacker, A.
    Materials Science Forum, 2000, 338
12345