Influence of pyrometric blind hole on the thermal field of SiC crystal growth system by PVT method

被引：0
|
作者：
Feng, Xian-Feng [1 ]
Chen, Zhi-Ming [1 ]
Pu, Hong-Bin [1 ]
机构：
[1] Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2010年 / 39卷 / 03期
关键词：
Silicon carbide - Crystal growth;
D O I：
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学科分类号：
摘要：
The effects of pyrometric blind hole with different Structural parameters on the thermal field of SiC crystal growth surface have been studied. The results of simulation indicate that the radial temperature gradient and the axial temperature gradient are approximately proportional to the depth and radius of pyrometric blind hole while influence of pyrometric blind hole size on the radial temperature gradient and the axial temperature gradient is different; Changes in pyrometric blind hole size is more suitable for regulation of the radial temperature gradient; In addition, the growth rate of poly-SiC around SiC monocrystalline has increased with the increase in the radius and depth of pyrometric blind hole increase.
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页码：741 / 746
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