High power ultraviolet light emitting diodes based on GaNAlGaN quantum wells produced by molecular beam epitaxy

被引：0
|
作者：
Cabalu, J.S. [4 ]
Bhattacharyya, A. [4 ]
Thomidis, C. [4 ]
Friel, I. [4 ]
Moustakas, T.D. [1 ,2 ]
Collins, C.J. [3 ]
Komninou, Ph. [4 ]
机构：
[1] Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215
[2] Center of Photonics Research, Boston University, Boston, MA 02215
[3] U.S. Army Research Laboratory, Adelphi, MD 20783, United States
[4] Physics Department, Aristotle University, 54124 Thessaloniki, Greece
来源：
Journal of Applied Physics | 2006年 / 100卷 / 10期
关键词：
In this paper; we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350 nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer; as well as the GaNAlGaN multiple quantum well (MQW) active region. Specifically; kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaNAlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800 μ m2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340 nm; the measured differential on-series resistance is 3 with electroluminescence spectrum full width at half maximum of 18 nm. The output power under dc bias saturates at 0.5 mW; while under pulsed operation it saturates at approximately 700 mA to a value of 3 mW; suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350 nm were investigated under dc operation and the output power saturates at 4.5 mW under 200 mA drive current. © 2006 American Institute of Physics;
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