Reduction of random noise in complementary metal oxide semiconductor image sensors by gate oxide interface control

被引：0
|
作者：
Jung, Jongwan [1 ]
Kwon, Doowon [2 ]
Lee, Duck-Hyung [2 ]
机构：
[1] Department of Nano Science and Technology, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Korea, Republic of
[2] Technology Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Yongin-City, Gyeonggi-Do, 449-711, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
关键词：
Image sensors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：3466 / 3469
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