The structure and passivation effect for the c-Si wafer of a-Si:H films with different processing parameters by HWCVD

被引：0
|
作者：
He, Yuping [1 ,2 ]
Huang, Haibin [1 ]
Zhou, Lang [1 ]
Ning, Wutao [1 ]
Yuan, Jiren [1 ]
Li, Dan [3 ]
机构：
[1] Institute of Photovoltaics, Nanchang University, Nanchang, China
[2] School of Science, Nanchang Institute of Technology, Nanchang, China
[3] School of Physics and Electronic Science, Guizhou Normal University, Guiyang, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2015年 / 46卷 / 22期
关键词：
Fourier transform infrared spectroscopy;
D O I：
10.3969/j.issn.1001-9731.2015.22.013
中图分类号：
学科分类号：
摘要：
Bifacial-deposited a-Si:H films were made on n-Cz-Si with different processing parameters by HWCVD, the structure and the passivation effect of a-Si:H films were analyzed by spectroscopic ellipsometry (SE) and Fourier Transform Infrared Spectroscopy (FT-IR) with different depositing pressure, current, and distance between filament and substrate. The results show that: (1) Relative content of SiH2to SiH bond in films decreases with the pressure increasing, but decreases firstly then increases with current increasing; (2) Compare to 7.5 cm of distance between filament and substrate, the samples of 4.0 cm, proportion of the SiH2bond compare to SiH bond is higher, passivation effect is better; (3) Within the scope of this study, the passivation effect is optimal with pressure 1.5 Pa, current 21.5 A, distance 7.5 cm, surface recombination velocity 2.9 cm/s. © 2015, Chongqing Functional Materials Periodical Press Co. Ltd. All right reserved.
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页码：22067 / 22070
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