The structure and passivation effect for the c-Si wafer of a-Si:H films with different processing parameters by HWCVD

被引：0
|
作者：
He, Yuping [1 ,2 ]
Huang, Haibin [1 ]
Zhou, Lang [1 ]
Ning, Wutao [1 ]
Yuan, Jiren [1 ]
Li, Dan [3 ]
机构：
[1] Institute of Photovoltaics, Nanchang University, Nanchang, China
[2] School of Science, Nanchang Institute of Technology, Nanchang, China
[3] School of Physics and Electronic Science, Guizhou Normal University, Guiyang, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2015年 / 46卷 / 22期
关键词：
Fourier transform infrared spectroscopy;
D O I：
10.3969/j.issn.1001-9731.2015.22.013
中图分类号：
学科分类号：
摘要：
Bifacial-deposited a-Si:H films were made on n-Cz-Si with different processing parameters by HWCVD, the structure and the passivation effect of a-Si:H films were analyzed by spectroscopic ellipsometry (SE) and Fourier Transform Infrared Spectroscopy (FT-IR) with different depositing pressure, current, and distance between filament and substrate. The results show that: (1) Relative content of SiH2to SiH bond in films decreases with the pressure increasing, but decreases firstly then increases with current increasing; (2) Compare to 7.5 cm of distance between filament and substrate, the samples of 4.0 cm, proportion of the SiH2bond compare to SiH bond is higher, passivation effect is better; (3) Within the scope of this study, the passivation effect is optimal with pressure 1.5 Pa, current 21.5 A, distance 7.5 cm, surface recombination velocity 2.9 cm/s. © 2015, Chongqing Functional Materials Periodical Press Co. Ltd. All right reserved.
引用
收藏
页码：22067 / 22070
相关论文
共 50 条
  • [31] High-Efficiency a-Si:H/μc-Si:H Solar Cells by Optimizing a-Si:H and μc-Si:H Sub-cells
    Hou, Guofu
    Zhang, Xiaodan
    Han, Xiaoyan
    Li, Guijun
    Geng, Xinhua
    Chen, Xinliang
    Zhao, Ying
    2013 IEEE INTERNATIONAL CONFERENCE ON ELECTRO-INFORMATION TECHNOLOGY (EIT 2013), 2013,
  • [32] Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer
    Lee, Soonil
    Ahn, Jaehyun
    Mathew, Leo
    Rao, Rajesh
    Zhang, Zhongjian
    Kim, Jae Hyun
    Banerjee, Sanjay K.
    Yu, Edward T.
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (16)
  • [33] THE FORMATION OF SPUTTERED TA/A-SI AND A-SI/TA INTERFACES IN A-SI/TA/A-SI/C-SI STRUCTURE
    IJDIYAOU, Y
    HAFIDI, K
    AZIZAN, M
    AMEZIANE, EL
    PATRAT, G
    BRUNEL, M
    ORTEGA, L
    TAN, TAN
    THIN SOLID FILMS, 1995, 266 (02) : 224 - 228
  • [34] A critical study on different hydrogen plasma treatment methods of a-Si: H/c-Si interface for enhanced defect passivation
    Soman, Anishkumar
    Antony, Aldrin
    APPLIED SURFACE SCIENCE, 2021, 553
  • [35] THE EFFECT OF THE GAP DOS IN A-SI ON THE PROPERTIES ON THE A-SI/C-SI HETEROJUNCTION
    XU, ZY
    CHEN, W
    ZHAO, BF
    WANG, CA
    ZHANG, FQ
    WANG, JY
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 983 - 986
  • [36] Effect of Interface States (Dit) at the a-Si/c-Si Interface on the Performance of Thin Film a-Si/c-Si/c-Si Heterojunction Solar Cells
    Alnuaimi, Aaesha
    Nayfeh, Ammar
    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 996 - 999
  • [37] In situ investigation of the a-Si:H/c-Si interface
    Feist, H
    Swiatkowski, C
    Elmiger, JR
    Zipfel, M
    Kunst, M
    AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 : 449 - 454
  • [38] Computational characterization of a-Si:H/c-Si interfaces
    Czaja, Philippe
    Giusepponi, Simone
    Gusso, Michele
    Celino, Massimo
    Aeberhard, Urs
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (04) : 1457 - 1469
  • [39] Computational characterization of a-Si:H/c-Si interfaces
    Philippe Czaja
    Simone Giusepponi
    Michele Gusso
    Massimo Celino
    Urs Aeberhard
    Journal of Computational Electronics, 2018, 17 : 1457 - 1469
  • [40] Defects and transport in a-Si:H/c-Si heterojunctions
    Unold, T
    Rösch, M
    Bauer, GH
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 1033 - 1037
12345