Improving high-κ gate dielectric properties by high-pressure water vapor annealing

被引：0

作者：

Punchaipetch, Prakaipetch ^{[1
]}

Miyashita, Makoto ^{[1
]}

Uraoka, Yukiharu ^{[1
]}

Fuyuki, Takashi ^{[1
]}

Sameshima, Toshiyuki ^{[2
]}

Horii, Sadayoshi ^{[3
]}

机构：

[1] Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan

[2] Tokyo University of Agriculture and Technology, 2-24-16 Nakamachi, Koganei, Tokyo 184-8588, Japan

[3] Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc., 2-1 Yasuuchi, Yatsuo-machi, Nei-gun, Toyama 939-2393, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1600年 / 45卷 / 4-7期

关键词：

High-pressure water vapor annealing has been found to improve the electrical properties of high-κ gate oxides. A vapor-annealing time of less than 60 min was effective in decreasing leakage current density and increasing capacitance density. This improvement is related to the active species in the water vapor which can react with unsaturated bonds in the bulk oxide film and dangling bonds at the film interface. However; the electrical properties did not improve after longer annealing periods. Optimizing the annealing conditions is essential for obtaining high quality high-κ films. © 2006 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

引用

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