Electrical and optical characteristics of different GaN-based light emitting diodes with current blocking layer

被引：0

作者：

Guo, Wei-Ling ^{[1
]}

Yu, Xin ^{[1
]}

Liu, Jian-Peng ^{[1
]}

Fan, Xing ^{[1
]}

Bai, Jun-Xue ^{[1
]}

机构：

[1] Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2013年 / 34卷 / 07期

关键词：

III-V semiconductors - Silica - Semiconductor quantum wells - Light absorption - Electrodes - Efficiency - Gallium nitride;

D O I：

10.3788/fgxb20133407.0918

中图分类号：

学科分类号：

摘要：

引用

页码：918 / 923

共 50 条

[1] Improvement of the Light Output Power of GaN-Based Vertical Light Emitting Diodes by a Current Blocking Layer
Jeong, Hwan Hee
Lee, Sang Youl
Jeong, Young Kyu
Choi, Kwang Ki
Song, June-O
Lee, Yong-Hyun
Seong, Tae-Yeon
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (07) : H237 - H239
[2] Effects of the electrode metal structure and the current blocking layer on the characteristics of blue GaN-based light-emitting diodes
Choi, Hee Seok
Tawfik, Wael Z.
Lee, June Key
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (06) : 891 - 894
[3] Effects of the electrode metal structure and the current blocking layer on the characteristics of blue GaN-based light-emitting diodes
Hee Seok Choi
Wael Z. Tawfik
June Key Lee
Journal of the Korean Physical Society, 2014, 64 : 891 - 894
[4] Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer
Kao, C. C.
Su, Y. K.
Lin, C. L.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (14) : 986 - 988
[5] Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer
Jang, HW
Lee, JL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06): : 2284 - 2287
[6] The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers
Chiou, Y. Z.
Chiang, T. H.
Kuo, D. S.
Chang, S. J.
Ko, T. K.
Hon, S. J.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (08)
[7] Improved light extraction of GaN-based light-emitting diodes by an ion-damaged current blocking layer
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea, Republic of
不详
Jpn. J. Appl. Phys., 1600, 8 PART 1
[8] Improved Light Extraction of GaN-Based Light-Emitting Diodes by an Ion-Damaged Current Blocking Layer
Lee, Keon Hwa
Kang, Ki Man
Hong, Gi Cheol
Kim, Seung Hwan
Sun, Woo Young
Yang, Gye Mo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (08)
[9] Effect of p-AlxGa1-xN electron blocking layer on optical and electrical properties in GaN-based light emitting diodes
Kim, Ki-Hyun
Lee, Sang-Won
Lee, Sung-Nam
Kim, Jihoon
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (06):
[10] Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD
Tian, Pengfei
Edwards, Paul R.
Wallace, Michael J.
Martin, Robert W.
McKendry, Jonathan J. D.
Gu, Erdan
Dawson, Martin D.
Qiu, Zhi-Jun
Jia, Chuanyu
Chen, Zhizhong
Zhang, Guoyi
Zheng, Lirong
Liu, Ran
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (07)

← 1 2 3 4 5 →