Improved light extraction of GaN-based light-emitting diodes by an ion-damaged current blocking layer

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School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea, Republic of [1 ]
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Jpn. J. Appl. Phys. | 1600年 / 8 PART 1卷
关键词：
Current blocking layers - Current crowding - Energetic oxygen ions - GaN-based light-emitting diodes - Insulation layers - Light extraction - Light output power;
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